دیتاشیت BS108/01,126

BS108

مشخصات دیتاشیت

نام دیتاشیت BS108
حجم فایل 55.625 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت BS108

BS108 Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Packaging: Tape & Box (TB)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 2.8V
  • Vgs(th) (Max) @ Id: 1.8V @ 1mA
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Base Part Number: BS10
  • detail: N-Channel 200V 300mA (Ta) 1W (Ta) Through Hole TO-92-3

دیتاشیت محصولات مشابه